Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

Abstract A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) thereby on-state resistance breakdown voltage can be controlled by varying barrier layer thickness Al mole fraction in non-recessed depletion-mode HEMTs. The indicates that 2DEG charge channel increases from 2.4 × 10 12 cm ?2 to 1.8 13 when increasing x = 0.1 0.4 an experimental non-recessed-gate HEMT. In HEMT, addition these parameters, recess height also control achieve high-performance power electronic devices. calculates critical which a normally-ON switch becomes normally-OFF. This shows good agreement reported results promises become useful tool advanced design of HEMTS.